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| 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM * Application for Ultra-compact ECM 0.220.05 1.20.05 0.80.05 0.320.05 3 2 0.10.05 Unit: mm 0.45 0.45 1.40.05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 -55~125 Unit V mA C C 0.3950.03 mW 0.90.1 Absolute Maximum Ratings (Ta=25C) 1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). TESM3 1.Drain 2.Source 3.Gate 2-1R1A JEDEC JEITA TOSHIBA Weight: 2.2mg (typ.) IDSS CLASSIFICATION A-Rank 140~240A B-Rank 210~350A Marking Equivalent Circuit D Type Name 9 IDSS Classification Symbol A :A -Rank B :B-Rank G S 1 2007-11-01 2SK3857TK Electrical Characteristics (Ta=25C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Gate-Drain Voltage Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Total Harmonic Distortion Time Output Stability Symbol IDSS ID VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2.2k,Cg = 5pF Test Condition Min 140 -0.1 0.9 -20 -3.0 Typ. 1.3 3.5 -0.5 0 -0.8 25 0.7 100 Max 350 370 -1.0 -1 -2 55 200 Unit A A V mS V pF dB dB dB mV % ms VGS(OFF) VDS = 2 V, ID = 1A |Yfs| VDS = 2 V,VGS = 0V V(BR)GDO IG=-10A Ciss Gv DGv(f) DGv(V) VN THD tos VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz,vin=100mV VDD = 2V, RL= 2.2k,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV VDD = 2V to 1.5V, RL= 2.2k,Cg = 5pF,f = 1kHz, vin=100mV VDD = 2V, RL= 1k,Cg = 10pF,Gv=80dB, A-Curve Filter VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz, vin=50mV VDD = 2V, RL= 2.2k,Cg = 5pF Time Output Stability Test Method a) TEST CIRCUIT b) TEST SIGNAL VDD 2.2k VDD=2.0V Vout Vout 5pF 0V VDD-ID*RL 0V tos 90% 2V 50% 2 2007-11-01 2SK3857TK 600 VDS=2V Common Source Ta = 25 C ID - VGS 600 VDS=2V Common Source ID - VGS (A) (A) 500 500 ID ID 400 400 Ta=85 300 Ta=25 200 Ta=-40 100 Drain Current 300 IDSS=330A 200 100 IDSS=150A 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 Drain Current Gate - Source voltage VGS (V) Gate - Source voltage VGS (V) 600 Common Source Ta = 25 C 500 ID - VDS 600 Common Source Ta = 25 C 500 ID - VDS IDSS=330A + 0.1 V (A) ID ID 400 (A) 400 IDSS=170A + 0.05 V VGS = 0 V - 0.05 V Drain Current 300 Drain Current + 0.1 V + 0.05 V VGS = 0 V 300 200 200 - 0.1 V 100 - 0.05 V - 0.1 V 100 0 0 1.0 2.0 0 0 1.0 2.0 Drain - Source voltage VDS (V) Drain - Source voltage VDS (V) |Yfs| - IDSS 3 VGS(OFF) - IDSS -500 Forward transfer admittance |Yfs| (mS) Gate-Source Cut-off Voltage VGS(OFF) (V ) -400 2 -300 -200 VGS(OFF):VDS=2V ID = 1A IDSS:VDS=2V VGS=0V Common Source Ta = 25 C 0 100 200 300 400 500 600 1 0 |Yfs|:VDS=2V VGS=0V IDSS: VDS=2V VGS=0V Common Source Ta = 25 C 100 200 300 400 500 600 -100 0 Drain Current IDSS (A) Drain Current IDSS (A) 3 2007-11-01 2SK3857TK Gv- IDSS 1 DGv(V)- IDSS -3.0 DGv:VDD=2V to 1.5V Cg=5pF RL= 2.2k, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C (dB) DGv(V) Gv:VDD=2V Cg=5pF RL= 2.2k, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C 0 100 200 300 400 500 600 0 -2.5 Voltage Gain Gv (dB) -2.0 -1 -2 Delta Voltage Gain -1.5 -1.0 -3 -0.5 -4 0 0 100 200 300 400 500 600 Drain Current IDSS (A) Drain Current IDSS (A) Gv - Cg 10 60 Common Source Ta = 25C VN - IDSS (mV) VN Noise Voltage 5 IDSS=350A IDSS=170A 50 Voltage Gain Gv (dB) 0 -5 40 30 VN:VDD=2V Cg=10pF RL= 1k f=1kHz 80dB AMP A-Curve Filter IDSS: VDS=2V VGS=0V 0 100 200 300 400 500 600 -10 -15 -20 VDD=2V Cg=5pF RL= 2.2k, f=1kHz vin=100mV Common Source Ta = 25C 0 2 4 6 8 10 20 10 0 Electret Capacitance Cg (pF) Drain Current IDSS (A) THD- IDSS 2.0 THD:VDD=2V Cg=5pF RL= 2.2k f=1kHz vin=50mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C 10 Ciss - VDS Total Harmonic Distortion THD (%) 1.5 (pF) Input capacitance Ciss 5 3 1.0 0.5 0 0 100 200 300 400 500 600 1 VGS=0V f=1kHz Common Source Ta = 25C 1 5 10 Drain Current IDSS (A) Drain - Source voltage VDS (V) 4 2007-11-01 2SK3857TK RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01 |
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